Manufacturing a Super Junction Semiconductor Device and Semiconductor Device

ABSTRACT

A super junction semiconductor device includes a semiconductor portion with a first surface and a parallel second surface. A doped layer of a first conductivity type is formed at least in a cell area. Columnar first super junction regions of a second, opposite conductivity type extend in a direction perpendicular to the first surface. Columnar second super junction regions of the first conductivity type separate the first super junction regions from each other. The first and second super junction regions form a super junction structure between the first surface and the doped layer. A distance between the first super junction regions and the second surface does not exceed 30 μm. The on-state or forward resistance of low-voltage devices rated for reverse breakdown voltages below 1000 V can be defined by the resistance of the super junction structure.

BACKGROUND

The drift layer of a super junction semiconductor device includesp-doped columns separated by n-doped columns. A high impurityconcentration in the n-doped columns assures a low on-state or forwardresistance of the semiconductor device. In the reverse mode, depletionzones extend between the p-doped and n-doped columns in a lateraldirection, such that a high reverse breakdown voltage can be achieveddespite the high impurity concentration in the n-doped columns. Superjunction semiconductor devices are typically designed for high voltageapplications, with the resistance in the drift layer dominating theon-state or forward resistance. It is desirable to provide improvedsuper junction semiconductor devices.

SUMMARY

According to an embodiment, a super junction semiconductor deviceincludes a semiconductor portion with a first surface and a secondsurface that is parallel to the first surface. A doped layer of a firstconductivity type is formed at least in a cell area. Columnar firstsuper junction regions of a second, opposite conductivity type extend ina direction perpendicular to the first surface. Columnar second superjunction regions of the first conductivity type separate the first superjunction regions from each other. The first and second super junctionregions form a super junction structure between the first surface andthe doped layer. A distance between the first super junction regions andthe second surface does not exceed 30 μm.

Another embodiment refers to a method of manufacturing a super junctionsemiconductor device. Columnar first and second super junction regionsof opposite conductivity types are formed in a semiconductor substrate.The first and second super junction regions extend in a directionperpendicular to a process surface of the semiconductor substrate andform a super junction structure. The semiconductor substrate is thinned,starting from the process surface, to obtain a single crystallinesemiconductor portion with a first surface and a second surface. Thesecond surface is obtained from the process surface and is parallel tothe first surface. A distance between the first super junction regionshaving the second conductivity type and the second surface does notexceed 30 μm. Impurities of the first conductivity type are introducedinto the second surface, to form a doped layer between the superjunction structure and the second surface at least in a cell area.

Those skilled in the art will recognize additional features andadvantages upon reading the following detailed description and onviewing the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the invention and are incorporated in and constitute apart of this specification. The drawings illustrate embodiments of thepresent invention and together with the description serve to explainprinciples of the invention. Other embodiments of the invention andintended advantages will be readily appreciated as they become betterunderstood by reference to the following detailed description.

FIG. 1A is a schematic cross-sectional view of a portion of a superjunction semiconductor device in accordance with an embodiment.

FIG. 1B is a schematic cross-sectional view of the semiconductor deviceof FIG. 1A along line B-B.

FIG. 1C is a schematic cross-sectional view of a portion of asemiconductor device having a cell area and an edge area, according toan embodiment providing a field stop structure.

FIG. 2A is a schematic cross-sectional view of a base substrate forillustrating a method of manufacturing a super junction semiconductordevice according to an embodiment that provides growing a semiconductorlayer by epitaxy.

FIG. 2B is a schematic cross-sectional view of a semiconductor substrateobtained from the base substrate of FIG. 2A by epitaxy.

FIG. 2C is a schematic cross-sectional view of a semiconductor portionobtained from the semiconductor substrate of FIG. 2B by thinning.

FIG. 2D is a cross-sectional view of a portion of a semiconductor deviceobtained from the semiconductor portion of FIG. 2C.

FIG. 3 is a schematic cross-sectional view of a portion of a superjunction semiconductor device in accordance with an embodiment providingcounter-doped islands.

FIG. 4A is a schematic cross-sectional view of a base substrate forillustrating a method of manufacturing a super junction semiconductordevice using implants into the base substrate.

FIG. 4B is a schematic cross-sectional view of a semiconductor substrateobtained from the base substrate of FIG. 4A.

FIG. 4C is a schematic cross-sectional view of a semiconductor portionobtained from the semiconductor substrate of FIG. 4B by thinning.

FIG. 4D is a schematic cross-sectional view of a portion of a superjunction semiconductor device obtained from the semiconductor portion ofFIG. 4C.

FIG. 5 is a schematic cross-sectional view of a portion of a superjunction semiconductor device in accordance with an embodiment providinga stress relief portion.

FIG. 6A is a schematic cross-sectional view of a base substrate forillustrating a method of manufacturing a semiconductor device using aporous layer.

FIG. 6B is a schematic cross-sectional view of a semiconductor substrateobtained from the base substrate of FIG. 6A by epitaxy.

FIG. 6C is a schematic cross-sectional view of the portion of thesemiconductor substrate of FIG. 6B during thinning using the porouslayer.

FIG. 6D is a schematic cross-sectional view of a portion of a superjunction semiconductor device in accordance with an embodiment providinga porous layer.

FIG. 7A is a schematic cross-sectional view of a portion of asemiconductor substrate for illustrating a method of manufacturing asuper junction semiconductor device using a self-aligned thinningprocess.

FIG. 7B is a schematic cross-sectional view of a semiconductor substrateobtained from the semiconductor substrate of FIG. 7A by thinning.

FIG. 7C is a schematic cross-sectional view of the semiconductorsubstrate of FIG. 7B after implanting a field stop structure.

FIG. 8A is a schematic cross-sectional view of a semiconductor substratefor illustrating a method of manufacturing a super junctionsemiconductor device using a layer of a first conductivity type forself-aligned thinning.

FIG. 8B is a schematic cross-sectional view of a semiconductor portionobtained from the semiconductor substrate of FIG. 8A by thinning.

FIG. 9A is a schematic cross-sectional view of a portion of a superjunction semiconductor device in accordance with an embodiment providinga super junction structure including a dielectric liner.

FIG. 9B is a schematic cross-sectional view of a portion of a superjunction semiconductor device in accordance with an embodiment providinga super junction structure with a dielectric liner and super junctionregions with graded impurity concentration.

FIG. 9C is a schematic cross-sectional view of a portion of a superjunction semiconductor device in accordance with an embodiment providinga dielectric liner enclosing first super junction regions.

FIG. 9D is a schematic cross-sectional view of a portion of a superjunction semiconductor device in accordance with an embodiment providinga super junction structure without a dielectric liner.

FIG. 9E is a schematic cross-sectional view of a portion of a superjunction semiconductor device in accordance with an embodiment using aheavily n-doped layer for providing the super junction structure.

FIG. 9F is a schematic cross-sectional view of a portion of a superjunction semiconductor device in accordance with an embodiment usingheavily n-doped and p-doped layers for providing the super junctionstructure.

FIG. 9G is a schematic cross-sectional view of a portion of a superjunction semiconductor device in accordance with an embodiment providinga multi-step field stop structure.

FIG. 10 is a simplified flow chart of a method of manufacturing a superjunction semiconductor device according to an embodiment.

DETAILED DESCRIPTION

In the following detailed description, reference is made to theaccompanying drawings, which form a part hereof, and in which are shownby way of illustrations specific embodiments in which the invention maybe practiced. It is to be understood that other embodiments may beutilized and structural or logical changes may be made without departingfrom the scope of the present invention. For example, featuresillustrated or described for one embodiment can be used on or inconjunction with other embodiments to yield yet a further embodiment. Itis intended that the present invention include such modifications andvariations. The examples are described using specific language, whichshould not be construed as limiting the scope of the appending claims.The drawings are not scaled and are for illustrative purposes only. Forclarity, the same elements have been designated by the same referencesin the different drawings if not stated otherwise.

The terms “having”, “containing”, “including”, “comprising” and the likeare open and the terms indicate the presence of stated structures,elements or features but not preclude additional elements or features.The articles “a”, “an” and “the” are intended to include the plural aswell as the singular, unless the context clearly indicates otherwise.

The Figures illustrate relative doping concentrations by indicating “−”or “+” next to the doping type “n” or “p”. For example “n⁻” means adoping concentration which is lower than the doping concentration of an“n”-doping region while an “n⁺”-doping region has a higher dopingconcentration than an “n”-doping region. Doping regions of the samerelative doping concentration do not necessarily have the same absolutedoping concentration. For example, two different “n”-doping regions mayhave the same or different absolute doping concentrations.

The term “electrically connected” describes a permanent low-ohmicconnection between electrically connected elements, for example a directcontact between the concerned elements or a low-ohmic connection via ametal and/or highly doped semiconductor.

FIGS. 1A and 1C show a super junction semiconductor device 500 with asemiconductor portion 100 having a first surface 101 and a secondsurface 102 parallel to the first surface 101. The semiconductor device500 may be, for example, an IGFET (insulated gate field effecttransistor), for example an MOSFET (metal oxide semiconductor fieldeffect transistor) in the usual meaning including FETs with metal andwith non-metal gate electrodes, an IGBT (insulated gate bipolartransistor) or a diode. The semiconductor portion 100 is provided from asingle-crystalline semiconductor material, for example silicon Si,silicon carbide SiC, germanium Ge, a silicon germanium crystal SiGe,gallium nitride GaN or gallium arsenide GaAs. A distance between thefirst and second surfaces 101, 102 may be less than 175 μm, for exampleat most 100 μm or at most 60 μm. The semiconductor portion 100 may havea rectangular shape with an edge length in the range of severalmillimeters. The normal to the first and second surfaces 101, 102defines a vertical direction and directions orthogonal to the normaldirection are lateral directions.

The semiconductor portion 100 includes a doped layer 130 of a firstconductivity type. In the case of diodes and IGFETs, the doped layer 130directly adjoins the second surface 102 and a net impurity concentrationin the doped layer 130 is comparatively high, e.g., at least 5×10¹⁸cm⁻³. According to other embodiments, a further layer may be providedbetween the doped layer 130 and the second surface 102. For example, forIGBTs an emitter layer of a second conductivity type, which is theopposite of the first conductivity type, may be arranged between thedoped layer 130 and the second surface 102, wherein a net impurityconcentration in the doped layer 130 is lower than 5×10¹⁸ cm⁻³.

A drift layer 120 is located between the first surface 101 and the dopedlayer 130. The drift layer 120 includes first super junction regions 121of the second conductivity type and second super junction regions 122 ofthe first conductivity type. The first super junction regions 121 maydirectly adjoin the doped layer 130. According to other embodiments, thefirst super junction regions 121 are formed at a distance to the dopedlayer 130 such that the drift layer 120 includes a contiguous portion ofthe first conductivity type that extends between the buried edges of thefirst and second super junction regions 121, 122 on the one side and thedoped layer 130 on the other side. The first and second super junctionregions 121, 122 directly adjoin to each other.

As shown in FIG. 1B, the semiconductor portion 100 may include a cellarea 610 and an edge area 690 surrounding the cell area 610 in thelateral directions. The edge area 690 extends along an outer surface 103of the semiconductor portion 100, wherein the outer surface 103 connectsthe first and second surfaces 101, 102. The edge area 690 may directlyadjoin the cell area 610. According to other embodiments, one or moretransition areas may separate the edge and the cell areas 610, 690,wherein the transition areas may include both features missing in thecell area 610 and features missing in the edge area 690. The doped layer130 may extend along a complete cross-sectional plane of thesemiconductor portion 100 parallel to the second surface 102 or may berestricted to the cell area 610.

The first and second super junction regions 121, 122 may be parallelstripes arranged at regular distances, respectively. According to otherembodiments, the cross-sections of the first super junction regions 121parallel to the first surface 101 may be circles, ellipsoids, ovals orrectangles, e.g., squares, with or without rounded corners, and thesecond super junction regions 122 may form a grid embedding the firstsuper junction regions 121.

The semiconductor portion 100 further includes one or more doped zones110 formed at least in the cell area 610. The one or more doped zones110 have the same conductivity type and directly adjoin the firstsurface 101. In a conductive mode (on-state) or forward mode of thesemiconductor device 500, an on-state or forward current flows betweenthe one or more doped zones 110 and the doped layer 130 through thedrift layer 120.

Embodiments concerning a super junction diode provide one single dopedzone 110 of the second conductivity type that may form an anode zonedirectly adjoining the first and second super junction regions 121, 122in the cell area 610. Embodiments concerning a super junction IGFET or asuper junction IGBT provide a plurality of doped zones 110 of the firstconductivity type, wherein each of the doped zones 110 directly adjoinsto a body zone 115 of the second conductivity type and each body zone115 directly adjoins to at least one of the first and one of the secondsuper junction regions 121, 122. At least the doped zones 110 may beexclusively formed within the cell area 610 and may be absent in theedge area 690. The body zones 115 are provided at least in the cell area610 and may or may not be absent in the edge area 690.

For IGFETs and IGBTs, gate electrode structures 210 may be provided tocontrol a minority charge carrier distribution in the body zones 115between the doped zones 110 and the corresponding second super junctionregions 122. A gate dielectric 205 is formed between the respective gateelectrode structure 210 and the corresponding body zone 115. The gateelectrode structures 210 may be arranged above the first surface 101.According to other embodiments, the gate electrode structures 210 may beprovided in trenches extending from the first surface 101 into thesemiconductor portion 100.

A first electrode structure 310 may be electrically connected to thedoped zones 110 and, for IGFETs and IGBTs, to the body zones 115 throughopenings in a dielectric layer 220 covering the gate electrodestructures 210. The openings in the dielectric layer 220 are formedbetween neighboring gate electrode structures 210. Highly doped contactzones 116 of the second conductivity type may be formed within the bodyzones 115 in direct contact with the first electrode structure 310. Thedielectric layer 220 electrically insulates the first electrodestructure 310 and the gate electrode structures 210.

A second electrode structure 320 directly adjoins the second surface 102of the semiconductor portion 100. The second electrode structure 320 maydirectly adjoin the doped layer 130. For IGBTs, the second electrodestructure 320 a directly adjoins an emitter layer of the secondconductivity type that is formed between the doped layer 130 and thesecond surface 102.

Each of the first and second electrode structures 310, 320 may consistof or contain, as main constituent(s), aluminum Al, copper Cu, or alloysof aluminum or copper, for example AlSi, AlCu or AlSiCu. According toother embodiments, one or both of the first and second electrodestructures 310, 320 may contain, as main constituent(s), nickel Ni,titanium Ti, silver Ag, gold Au, platinum Pt and/or palladium Pd. Forexample, at least one of the first and second electrode structures 310,320 includes two or more sub-layers, each sub-layer containing one ormore of Ni, Ti, Ag, Au, Pt, and Pd as main constituent(s), e.g.,silicides and/or alloys therefrom. A peripheral dielectric 222 may beprovided in the edge area 690 on the first surface 101.

The illustrated embodiment refers to an IGFET, wherein the firstconductivity type is the n-type, the second conductivity type is thep-type, the first electrode structure 310 is a source electrode, thedoped zones 110 are source zones, the doped layer 130 is a drain layerand the second electrode structure 320 is a drain electrode. Accordingto other embodiments, the first conductivity type may be the p-type.

A distance dx between the first super junction regions 121 and thesecond surface 102 is at most 30 μm, for example at most 20 μm or atmost 15 μm. Due to the low distance between the super junction structureand the second surface 102, the on-state or forward resistance isdominated by the resistance of the drift layer 120, which iscomparatively low due to the fact that the super junction structureallows a comparatively high impurity concentration in the drift layer120. The on-state or forward resistance of low-voltage devices rated forreverse breakdown voltages below 1000 V is defined by the resistance ofthe super junction structure instead of the resistance of a basesubstrate. Unwanted electric resistance of the semiconductor portion canbe avoided for voltage classes below 1000 V.

A field stop structure 129 of the first conductivity type may be formedbetween the super junction structure and the doped layer 130. The fieldstop structure 129 may directly adjoin the doped layer 130. A meanimpurity concentration of the field stop structure 129 is at most 50% ofa maximum impurity concentration in the doped layer 130. For example,the mean net impurity concentration in the field stop structure 129 isbetween 5×10¹⁴ cm⁻³ and 5×10¹⁵ cm⁻³. The field stop structure 129 may bea contiguous layer oriented parallel to the second surface 102. Otherembodiments may provide a segmented field stop structure 129, whereinthe segments may be provided in the vertical projection of the firstsuper junction regions 121 and may be absent in the vertical projectionof the second super junction regions 122 or vice versa, as illustrated.

Other embodiments provide a laser fusing process to anneal the implantedfield stop structures 129. For example, the implanted impurities containselenium Se, phosphorus P atoms/ions or both in combination. The laseranneal reduces the thermal load and is applicable for thin siliconwafers including the substrate portions.

When a reverse voltage is applied, the field stop structure 129 preventsa depletion zone extending from the pn-junctions between the first andsecond super junction regions 121, 122 in the vertical direction towardsthe second surface 102 from intruding the doped layer 130 up to a depthat which the depletion zone reaches the second electrode structure 320or unavoidable spikes of metal extending from the second electrodestructure 320 into the doped layer and, as a consequence, ensures a softswitching behavior of the semiconductor device 500. The doped layer 130,the field stop structure 129 and the first and second electrodestructures 310, 320 may be formed both in the cell area 610 and the edgearea 690 surrounding the cell area 610, or may be formed exclusively inthe cell area 610, respectively.

According to the embodiment shown in FIG. 1C the doped layer 130 and thefirst electrode structure 310 are absent in at least an outer edgeportion 699 extending along the outer surface 103 of the semiconductorportion 100. At least one structure or component allowing an on-state orforward current to flow in the second super junction regions 122 of thecell area 610, for example a gate electrode, a source zone, a sourcecontact, a body zone or a gate contact is either not provided in theedge area 690, or without connection, or inoperable for other reasons.

FIG. 1C shows the first electrode structure 310 with a first thicknessd1 and the second electrode structure 320 with a second thickness d2. Asum of the first and second thicknesses d1, d2 is at least 20% of athickness d0 of the semiconductor portion 100 between the first and thesecond surfaces 101, 102. For example, an IGFET specified for abreakdown voltage of 600V may have a semiconductor portion 100 with athickness of about 60 μm. The total metallization thickness, which isthe sum of the first and second thicknesses d1, d2 is at least 12 μm.The comparatively thick metallization provides a high heat capacity thatis effectively thermally coupled to the semiconductor portion 100 at alow thermal resistance. The thick metallization prevents a rapid heatingof the semiconductor device 500 and settles the poor heating capacity ofthe comparatively thin substrate portion 100.

FIGS. 2A to 2D illustrate a method of manufacturing a super junctionsemiconductor device 500. A base substrate 190 with two parallel processsurfaces 191, 192 is provided, and includes a single crystallinesemiconductor material. The semiconductor material may be silicon Si,silicon carbide SiC, Germanium Ge, a silicon germanium crystal SiGe,gallium nitride GaN or gallium arsenide GaAs. The base substrate 190 maybe a homogenous substrate from the semiconductor material, e.g., asilicon wafer, or a multi-material substrate with the semiconductormaterial provided as a semiconductor layer on a non-semiconductingcarrier substrate provided, for example, from a silicon oxide or glass,e.g., an SOI (silicon-on-insulator) wafer.

FIG. 2A shows the base substrate 190 with the two parallel processsurfaces 191, 192. In the illustrated embodiment, the semiconductormaterial of the base substrate 190 is heavily n⁺-doped. Otherembodiments may provide an intrinsic or p-doped semiconductor material.The base substrate 190 may or may not contain implanted sectionsadjoining a first process surface 191. A single-crystal semiconductorlayer 180 may be grown by epitaxy on the first process surface 191,wherein the grown single-crystal lattice of the semiconductor layer 180grows in registry with the single-crystal of the base substrate 190.

First and second super junction regions 121, 122 are formed in thesemiconductor layer 180 by repeating a sequence including (i) growing asub-layer per epitaxy and (ii) implanting impurities of at least oneconductivity type into a surface of the sub-layer using an implant mask,wherein the super junction structure is obtained by diffusing theimplanted impurities out of the implant zones to form at least one ofthe first and second super junction regions 121, 122. For IGFETs andIGBTs, a plurality of body zones 115 of the second conductivity type anddoped zones 110 of the first conductivity type are formed. Doped zones110 or one single doped zone 110 of the second conductivity type and nobody zones 115 are provided in the case of super junction diodes.

FIG. 2B shows a semiconductor substrate 100 a including the basesubstrate 190 and the semiconductor layer 180 which includes a superjunction structure formed by the first and second super junction regions121, 122. Each body zone 115 directly adjoins to one of the first superjunction regions 121. The doped zones 110 are formed within the bodyzones 115, wherein both the doped zones 110 and the body zones 115directly adjoin a first surface 101 of the semiconductor substrate 100a. Gate dielectrics 205 may be formed on the first surface 101. Gateelectrodes 210 may be provided on the gate dielectrics 205. A dielectriclayer 220 may be provided to encapsulate the gate electrodes 210 and toinsulate the second super junction regions 122. A first electrodestructure 310 is provided directly adjoining portions of the firstsurface 101 between the gate electrodes 210. According to an embodiment,impurities diffusing out of the heavily n⁺-doped base substrate 190 ofFIG. 2A during the growth of the semiconductor layer 180 may form adoped layer 130 directly adjoining the second surface 102.

Both the reverse breakdown voltage and the on-state/forward currentincrease with increasing thickness of the semiconductor portion 100. Forapplications tolerating a lower reverse breakdown voltage, thesemiconductor substrate 100 a is thinned from the exposed second processsurface 192 of the base substrate 190 to reduce the on-state or forwardresistance. Thinning may include a CMP (chemical mechanical polishing),a wet etching, or a combination of both.

FIG. 2C shows a semiconductor portion 100 resulting from thesemiconductor substrate 100 a of FIG. 2B by thinning from the secondprocess surface 192. A first surface 101 of the semiconductor portion100 corresponds to the exposed surface of the semiconductor layer 180 ofFIG. 2B after the epitaxy process. The thinning exposes a second surface102 parallel to the first surface 101. A doped layer 130 may be formedby implanting impurities into the thinned second surface 102. A secondelectrode structure 320 is provided that directly adjoins the secondsurface 102.

FIG. 2D shows the semiconductor device 500 resulting from thesemiconductor portion 100 of FIG. 2C. As described above, the dopedlayer 130 may be introduced into the semiconductor portion 100 byout-diffusion from the base substrate 190.

According to another embodiment, the doped layer 130 is introduced byperforming an ion beam implant of, for example phosphor P, arsenic As,sulfur S, selenium Se, hydrogen H (protons) and/or helium He into thesecond surface 102 after thinning. The implant may be performed at animplant dose which amorphizes a section of the semiconductor portion 100directly adjoining the second surface 102. The amorphized portion may betempered at a temperature between 300 and 500 degree Celsius such thatthe doped layer 130 is formed by solid phase epitaxy. The doped layer130 may be tempered using a laser fusion process, wherein the laser iscontrolled to be exclusively effective in a portion of the secondsurface 102 where the doped layer 130 is formed.

FIG. 3 refers to an embodiment providing counter-doped islands 132 ofthe second conductivity type which directly adjoin the second surface102. The counter-doped islands are separated by portions of the dopedlayer 130, and are electrically connected to the second electrodestructure 320. The counter-doped islands 132 are formed in the cell area610 and may be absent in edge area 690 surrounding the cell area 610.

At current densities exceeding a threshold that depends on the appliedvoltage between the first and second electrode structures 310 and 320,the counter-doped islands 132 inject charge carriers into the driftlayer 120. Since the injected charge carriers increase the density offree charge carriers in the drift zone 120, the counter-doped islands132 reduce the on-state or forward resistance at current densitiesexceeding the threshold. According to embodiments providing n-IGFETs,the counter-doped islands are p-doped.

Conventional super junction IGFETs with substrate portions having athickness greater than 175 μm typically provide floating counter-dopedislands embedded between the drift layer and the doped layer. Floatingcounter-doped islands begin to inject charge carriers into the driftlayer only when a Zener breakthrough takes places that electricallyconnects the floating counter-doped islands to the doped layer. Hence,conventional, floating counter-doped islands become active only atcomparatively high current densities that generate a voltage dropsufficient to trigger the Zener breakthrough to the drain layer. Sinceusually the floating counter-doped islands are provided at an earlystage of the processing and are subjected to a high temperature budget,the pn-junction between the floating counter-doped islands and the drainlayer is not abrupt, resulting in a comparatively high Zenerbreakthrough voltage. Hence, charge carrier injection only takes placeat high voltage drops over the substrate portion.

Instead, according to the embodiments, the counter-doped islands 132 maybe implanted directly through the second surface 102 after the thinningof the substrate portion 100 such that the counter-doped islands 132 areelectrically connected to the second electrode structure 320.

As a result, the counter-doped islands 132 start injecting chargecarriers at a voltage drop of about 0.6 V, which is significantly lessthan the Zener breakthrough voltage in conventional designs. Thecounter-doped islands 132 inject charge carriers at lower currentdensities and, as a result, reduce the on-state or forward resistance atyet lower current densities than conventional approaches.

The counter-doped islands 132 may be located in the vertical projectionof the first super junction regions 122 and may be absent in thevertical projection of the second super junction regions 121, asillustrated, or vice versa. Portions of the doped layer 130 separate thecounter-doped islands 132. The doped layer 130 may form a grid embeddingthe counter-doped islands 132. A maximum impurity concentration in thecounter-doped islands 132 may be at least 5×10¹⁷ cm⁻³. At low currentdensities, the portions of the doped layer 130 separating thecounter-doped islands 132 ensure a current path to the second electrodestructure 320. The counter-doped islands 132 may be combined with afield stop structure 129 blocking a punch-through of an electric fieldinto the counter-doped island 132 in a reverse mode of the semiconductordevice 500.

FIGS. 4A to 4D refer to an embodiment providing the counter-dopedislands 132 from a base substrate 190 that is heavily doped withimpurities of the second conductivity type or at least contains aheavily doped layer on a carrier substrate. Through openings in animplant mask 199, impurities of the first conductivity type areimplanted into first sections 130 a of a first process surface 191 ofthe base substrate 190, wherein second sections of the first processsurface 191 between the first sections 130 a are covered by the implantmask 199 and remain without implant.

FIG. 4A shows the base substrate 190, which includes implanted sections130 a below the first process surface 191. A semiconductor layer 180 isgrown by epitaxy onto the first process surface 191 as described incontext with FIG. 2B.

FIG. 4B shows the semiconductor layer 180 grown on the base substrate190. A super junction structure including first and second superjunction regions 121, 122 is formed in the semiconductor layer 180.Impurities of the first conductivity type diffuse out from the implantedfirst sections 130 a into the semiconductor layer 180, forming diffusedsections 130 b extending over portions of both the base substrate 190and the semiconductor layer 180. Between the diffused sections 130 b ofthe first conductivity type, impurities of the second conductivity typediffuse out from the base substrate 190 into the semiconductor layer180, forming counter-doped diffused sections 132 b extending overportions of both the base substrate 190 and the semiconductor layer 180.The semiconductor substrate 100 a, including the base substrate 190 andthe semiconductor layer 180, is thinned, starting from the secondprocess surface 192 of the base substrate 190.

FIG. 4C illustrates a semiconductor portion 100 obtained by thinning thesemiconductor substrate 100 a of FIG. 4B from the second process surface192. Portions of the diffused sections 130 b of the first conductivitytype form a segmented doped layer 130. Portions of the counter-dopeddiffused sections 132 b form counter-doped islands 132.

FIG. 4D shows a semiconductor device 500 resulting from thesemiconductor portion of FIG. 4C after providing gate dielectric 205,gate electrodes 210, dielectric layers 220, 222 and first and secondelectrode structures 310, 320. The counter-doped islands 132 are absentin the edge region 690.

FIG. 5 shows a semiconductor device 500 with an auxiliary structure 126of one or more foreign materials other than a first semiconductormaterial forming the single-crystal of the semiconductor portion 100.The foreign materials may be dielectric materials like silicon oxide,for example a silicon oxide deposited using TEOS (tetraethylorthosilane)as precursor material, silicon nitride, silicon oxynitride, BSG(boron-silicate-glass, PSG (phosphorus-silicate-glass), BPSG(boron-phosphorus-silicate-glass) or a dielectric polymer.

The auxiliary structure 126 may be a structure embedding a buried gateelectrode provided between the first surface 101 and the doped layer130. According to other embodiments, the auxiliary structure 126 is aby-product resulting from providing the super junction structure by atrench process. Trench processes include introducing trenches into thesubstrate portion 100 and introducing impurities through sidewalls ofthe trenches into adjoining sections of the semiconductor portion 100,e.g., by an angled implant, or depositing one or more heavily dopedlayers, to form the first and/or second super junction regions 121, 122.After the implant or the deposition of the one or more heavily dopedlayers, the trenches may be filled with a solid foreign material to formthe auxiliary structures 126.

The auxiliary structures 126 may be formed within a section of thesemiconductor portion 100 between the first surface 101 and a buriededge of the super junction structure oriented to the second surface 102.The semiconductor portion 100 may include a stress relief portion 142,with atoms of a second semiconductor material replacing atoms of thefirst semiconductor material in the crystal lattice of thesingle-crystal forming the semiconductor portion 100. For example, thefirst semiconductor material is silicon Si and the second semiconductormaterial is germanium Ge. The stress relief portion 142 may be formed byimplanting Ge through the second surface 102 after thinning and beforeproviding the second electrode structure 320.

In the stress relief portion 142, the atoms of the second semiconductormaterial change the lattice parameter of the single-crystal. Theconcentration of the second semiconductor material may be tuned tocompensate for a wafer bowing induced by mechanical stress resultingfrom different thermal expansion coefficients of the semiconductormaterial and the foreign material, wherein the wafer is a composite of aplurality of identical substrate portions. With thin wafers andsubstrate portions 100 below 175 w, wafer bowing complicates waferhandling and may even result in cracks damaging the wafers.

The stress relief portion 142 may overlap at least a part of the driftzone 120, for example the half of the drift zone 120 oriented to thesecond surface 102. The stress relief portion 142 overlaps both firstand second super junction regions 121, 122. According to otherembodiments, the stress relief portion 142 overlaps the complete driftzone 120. In addition, the stress relief portion 142 may overlap otherdoped structures, e.g., the doped layer 130.

FIGS. 6A to 6C refer to an embodiment using a porous layer 182 for thethinning of a semiconductor substrate 100 a to obtain thinnedsemiconductor portions 100.

According to FIG. 6A, a base substrate 190 with two parallel processsurfaces 191, 192 is provided, and includes a single crystallinesemiconductor material as described for FIG. 2A. A porous layer 182 maybe provided on the first process surface 191. According to anotherembodiment, the porous layer 182 may be formed in a section of the basesubstrate 190 directly adjoining the first process surface 191. Theporous layer 182 is a single crystalline semiconductor layer, whichcrystal lattice is in register with the crystal lattice of the basesubstrate 190 but with nano-scale swaths and voids having dimensionsgreater than the lattice constant.

For example, the porous layer 182 may include nano-pores having a porediameter below about 2 nm and/or meso-pores having diameters betweenabout 2 nm and about 100 nm and/or macro-pores having diameters in themicrometer range. The porosity may be greater than 30%, for examplegreater than 50%. The porous layer 182 may be formed by an anodicoxidation using one or more solution(s) containing fluoride F⁻.According to an embodiment, a semiconductor layer is grown by epitaxyand an anodic oxidation process is performed using a solution containinghydrofluoric acid HF and ethanol or acetic acid. Other embodimentsemploy HF/dimethylformamide or HF/acenitrile, optionally in combinationwith a light source.

FIG. 6A shows the porous layer 182 provided on the first process surface191 of the base substrate 190, which may include an intrinsicsemiconductor material. The thickness of the porous layer 182 may bebetween 1 μm and 50 μm. Further portions 189 of a semiconductor layer180 may be grown by epitaxy on the porous layer 191, for example anepitaxy process using trichlorosilane.

First and second super junction regions 121, 122 are formed in a driftlayer 120 of the semiconductor layer 180 by repeating a sequence thatincludes growing a sub-layer per epitaxy and implanting impurities of atleast one conductivity type into a surface of the sub-layer using animplant mask, wherein the super junction structure is obtained bydiffusing at least one of the first and second super junction regions121, 122 out from the implants.

During formation of the super junction structure in the drift layer 120,oxygen atoms/ions diffusing out of the base substrate 190 in thedirection of the drift layer 120 are gettered along the inner walls ofthe pores in the porous layer 182. Thereby the porous layer 182 keepslow the concentration of thermal donator impurities in the drift layer120, which could otherwise adversely affect the device characteristics,e.g., the electric strength in the reverse direction.

FIG. 6B shows a semiconductor substrate 100 a obtained from the basesubstrate 190 and the semiconductor layer 180 with the porous layer 182and the super junction structure including the first and second superjunction regions 121, 122. Thinning of the semiconductor substrate 100 aincludes parting the semiconductor substrate 100 a along the porouslayer 182. For example a fluid beam 183 containing a gaseous fluid or aliquid, e.g., water, may be directed to a portion of an outer surface103 of the semiconductor substrate 100 a where the porous layer 182 isexposed.

The fluid mechanically breaks (crunches, dissolves, disperses) theporous layer leaving the base substrate 190 separated from the remainingportions of the semiconductor layer 180. According to anotherembodiment, hydrogen is introduced into the porous layer 182. Thehydrogen reallocates the pores in a way that cavities are formed alongthe interfaces to the base substrate 190 and the further portions 189 ofthe semiconductor layer 180. The cavities grow such that the basesubstrate 190 is separated from the further portions 189.

FIG. 6C shows the fluid beam 183 impinging on an exposed section of theporous layer 182 and dispersing the semiconductor material of the porouslayer 182. According to an embodiment, the thinning may be finished withthe parting and a subsequent cleaning process. According to otherembodiments the thinning may include CMP, wet etching, or combinationsof both which may further thin the substrate portion 100 and/orplanarize the second surface 102.

A porous layer 182 provided between the super junction structure withthe first and second super junction regions 121, 122 and the secondsurface 102 distinguishes the embodiment of FIG. 6D from that in FIG.2D. The porous layer 182 includes nano-pores. The porosity is at most5%. The nano-pores getter oxygen atoms/ions diffusing into the directionof the drift layer 120 along inner surfaces of the nano-pores in thecrystal lattice. As a consequence, the porous layer 182 keeps low theconcentration of thermal donator impurities in the drift layer 120,which otherwise may adversely affect the device characteristics.

FIGS. 7A to 7C refer to a self-aligned thinning process. A semiconductorlayer 180 is provided on a first process surface 191 of a base substrate190 with a second process surface 192 parallel to the first processsurface 191. A super junction structure including first and second superjunction regions 121, 122 is formed in a drift layer 120 of thesemiconductor layer 180. For the manufacture of IGFETs and IGBTs basezones 115 and doped zones (source zones) 110 are formed along an exposedfirst surface 101 of the semiconductor layer 180 parallel to the firstprocess surface 191. Depletion zones 123 extend along the pn-junctionsin the drift layer 120.

FIG. 7A shows that at least portions of a depletion zone boundary 123are located between the super junction structure and the second processsurface 192. A wet etch process effective on the second process surface192 is performed that stops in a self-aligned manner when it reaches thedepletion zone boundary 123. For example, an etch stop signal may begenerated when the depletion zone boundary 123 is exposed and the wetetch is stopped in response to the etch stop signal. According toanother embodiment, the wet etch process is charge selective and stopsat the depletion zone boundary 123 assigned to the super junctionstructure.

As shown in FIG. 7B, a semiconductor portion 100 with two parallelsurfaces 101, 102 is obtained from the semiconductor layer 180 of FIG.7A. A first surface 101 of the semiconductor portion 100 is the exposedsurface of the semiconductor layer 180. A second surface 102 is obtainedby thinning the composite formed by the base substrate 190 andsemiconductor layer 180 from the second process surface 192. Theself-aligned process allows for tuning precisely the thickness of thesubstrate portion 101.

Impurities of the first conductivity type may be implanted through thethinned second surface 102 to form a field stop structure 129. Theimplant may be effective for the whole second surface 102, for the wholecell area, or for portions of the cell area. The implant dose forsurface sections in the vertical direction of the first super junctionregions 121 may be the same as or may be higher than for surfacesections in the vertical direction of the second super junction regions122. A doped layer 130 may be formed by an implant, e.g., an amorphizingimplant as described above.

FIG. 7C shows an embodiment with first sections 129 a of the field stopstructure 129 in the vertical projection of the first super junctionregions 121 formed by a higher implant dose than second sections 129 bin the vertical projection of the second super junction regions 122 suchthat the higher implant dose counter-dopes sections of the originalfirst super junction regions oriented to the second surface 102. The netdopant concentrations in the first and second sections 129 a, 129 b maybe almost equal. Other embodiments provide the field stop implantexclusively into the first super junction regions 121. Thecounter-doping of sections of the first super junction regions 121 allowimplementation of field stop structures 129 even when after aself-aligned wet etch process a distance between the first superjunction regions 121 and the second surface 102 is too narrow forimplementing a field stop layer 129 in a conventional manner.

FIGS. 8A to 8B refer to a self-aligned thinning process using apn-junction in the base of the semiconductor portion 100. For example, asemiconductor layer 180 as described for FIG. 6B is formed on a firstprocess surface 191 of a base substrate 190, which may be of the secondconductivity type. The semiconductor layer 180 may include a sub-layerof the first conductivity type, e.g., a layered field stop structure129. According to other embodiments, the layered field stop structure isobtained by implanting suitable impurities, e.g., hydrogen (protons),either through the base substrate 190 or through an exposed firstsurface 101 of the semiconductor layer 180, wherein the implant may betempered at temperatures between 380 and 420 degree Celsius.

FIG. 8A shows a depletion zone 139 that extends on both sides of apn-junction formed between the layered field stop structure 129 and thebase substrate 190. A planar depletion zone boundary 133 is formedwithin the base substrate 190. A wet etch thins the base substrate 190from a second process surface 192 of the base substrate 190, which isparallel to the first process surface 191. The etch may stop at theplanar depletion zone boundary 133.

FIG. 8B illustrates the semiconductor portion 100 obtained from thecomposite containing the semiconductor layer 180 and the base substrate190 of FIG. 8A. The position of the second surface 102 of thesemiconductor portion 100 is defined by the planar depletion zoneboundary 133 in FIG. 8A.

According to an embodiment, the impurity concentration in the basesubstrate 190 is at least 100 times the impurity concentration in thefield stop structure 129, such that the depletion zone extends only to avery low degree into the base substrate 190 and the planar depletionzone boundary 133 approximately coincides with the interface between thebase substrate 190 and the semiconductor layer 180. Other embodimentsmay provide a defined overetch of the planar depletion zone boundary 133to remove remnant portions of the base substrate 190 and a definedportion of the semiconductor layer 180.

Providing the first and second super junction regions 121, 122 byrepeating a sequence including growing a sub-layer by epitaxy andimplanting impurities of at least one conductivity type into a surfaceof the sub-layer using an implant mask, and obtaining the super junctionstructure by diffusing at least one of the first and second superjunction regions 121, 122 from the implants may result in undulatedimpurity profiles of the first and second super junction regions 121,122, wherein the undulation may occur in the vertical, and/or lateraldirection.

FIGS. 9A to 9G refer to super junction structures obtained by trenchapproaches that provide non-undulated impurity profiles. The trenchapproaches provide introducing trenches into a semiconductor substratefrom a direction opposite to the direction from which the thinning isperformed.

For example, the super junction semiconductor device 500 of FIG. 9A maybe obtained by etching trenches into an n-type semiconductor substrate,lining at least sidewalls of the etched trenches with a dielectric liner125 and then growing by epitaxy single-crystalline p-doped semiconductormaterial in the trenches to form the first super junction regions 121.The first super junction regions 121 may be homogenously doped. Eachfirst super junction region 121 may directly adjoin a portion of asegmented field stop structure 129 formed in its vertical projection.The field stop structure 129 may include portions directly adjoining thedoped layer 130 in the projection of the first super junction regions121. The field stop structure 129 may be completely absent in theprojection of the second super junction regions 122. According to anembodiment, segments of the field stop structure 129 may be implantedthrough the trench bottoms.

FIG. 9B shows a super junction semiconductor device 500 with a firstportion 121 a of the first super junction regions 121 oriented to thefirst surface 101 having a higher impurity concentration than a secondportion 121 b oriented to the second surface 102. Other embodiments mayprovide first super junction regions 121 with more than two portions ofdifferent impurity concentrations or with smoothly varying impurityprofiles.

FIG. 9C shows a super junction device 500 including a dielectric liner125 that lines trenches introduced into a semiconductor portion 100 froma direction given by the first surface 101 and that includes a sidewallportion 125 a covering a sidewall of the trench and a bottom portion 125b extending at the bottom of the trench in substance parallel to thesecond surface 102 and closing the trench at the bottom. As a result,the dielectric liner 125 encloses the first super junction regions 121in the drift layer 120 completely. Between the first super junctionregions 121 and the first surface 101, body zones 115 or doped zones 110may be formed that directly adjoin the first super junction regions 121.

The field stop structure 129 may be segmented with each segment locatedin the vertical projection of one of the second super junction regions122. The field stop structure 129 may be absent in the projection of thefirst super junction regions 121.

The super junction semiconductor device 500 of FIG. 9D provides asegmented field stop structure 129 with each segment arranged in theprojection of one of the first and second super junction regions 121,122. The first super junction regions 121 directly adjoin the adjacentsecond super junction regions 122 and include a higher doped firstportion 121 a oriented to the first surface 101 and a lower doped secondportion 121 b oriented to the second surface 102. The super junctionstructure may be provided by growing a p-doped semiconductor material ina trench introduced from a direction given by the first surface 101.

FIG. 9E shows a continuous field stop structure 129 having an interfaceto the drift layer 120 which in substance is parallel to the secondsurface 102. A heavily n-doped layer 122 a of a semiconductor materialis provided, for example by growing by epitaxy silicon on a trenchsidewall or by implanting impurities into the trench sidewall. Thetrench extends between the body zone 115 and the field stop structure129 and may extend into the field stop structure 129. The heavilyn-doped layer 122 a forms part of the second super junction regions 122.Growing by epitaxy a single crystalline p-type semiconductor materialwithin the trenches may form the first super junction regions 121.

The super junction semiconductor device 500 of FIG. 9F differs from thatin FIG. 9E in that the first super junction regions 121 are formed as aheavily doped layer lining the trench and directly adjoining a heavilydoped n-doped layer 122 a. The heavily doped layer forming the firstsuper junction regions 121 may be formed by an angled implant into thesidewalls and the bottom of the trenches after implanting the heavilydoped portions 122 a of the second super junction regions 122. Then afurther epitaxial layer may be grown that closes the trenches to formvoids 123. In the epitaxial layer grown above the voids 123, doped zones110 and body zones 115 may be formed.

The super junction device 500 shown in FIG. 9G includes the superjunction structure of FIG. 9E. The field stop structure 129 includes alower doped first portion 129 a directly adjoining the drift layer 120and a stronger doped second portion 129 b directly adjoining the dopedlayer 130, wherein an interface between the first and the secondportions 129 a, 129 b is in substance parallel to the second surface102.

The method of manufacturing a super junction semiconductor device asillustrated in FIG. 10 includes forming columnar first and second superjunction regions of opposite conductivity types in a semiconductorsubstrate (902). The first and second super junction regions extend in adirection perpendicular to a process surface of the semiconductorsubstrate and form a super junction structure. The semiconductorsubstrate is thinned starting from the process surface to obtain asingle crystalline semiconductor portion with a first surface and asecond surface (904). The second surface is obtained from the processsurface and is parallel to the first surface. A distance between thefirst super junction regions having the second conductivity type and thesecond surface does not exceed 30%. Into the second surface, impuritiesof the first conductivity type are introduced to form a doped layerbetween the super junction structure and the second surface at least ina cell area (906).

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat a variety of alternate and/or equivalent implementations may besubstituted for the specific embodiments shown and described withoutdeparting from the scope of the present invention. This application isintended to cover any adaptations or variations of the specificembodiments discussed herein. Therefore, it is intended that thisinvention be limited only by the claims and the equivalents thereof.

What is claimed is:
 1. A super junction semiconductor device comprising:a semiconductor portion with a first surface and a second surfaceparallel to the first surface and comprising a doped layer of a firstconductivity type formed at least in a cell area; and columnar firstsuper junction regions of a second, opposite conductivity type extendingin a direction perpendicular to the first surface and separated bycolumnar second super junction regions of the first conductivity type,the first and second super junction regions forming a super junctionstructure between the first surface and the doped layer, wherein adistance between the first super junction regions and the second surfacedoes not exceed 30 μm.
 2. The super junction semiconductor deviceaccording to claim 1, wherein a thickness of the semiconductor portionbetween the first and second surfaces is at most 100 μm.
 3. The superjunction semiconductor device according to claim 1, further comprising afirst electrode structure directly adjoining the first surface and asecond electrode structure directly adjoining the second surface, thefirst electrode structure having a first thickness and the secondelectrode structure having a second thickness, wherein the sum of thefirst and second thicknesses is at least 20% of the thickness of thesemiconductor portion between the first and second surfaces.
 4. Thesuper junction semiconductor device according to claim 1, furthercomprising counter-doped islands of the second conductivity type, thecounter-doped islands directly adjoining the second surface and beingseparated by portions of the doped layer.
 5. The super junctionsemiconductor device according to claim 4, wherein the counter-dopedislands are aligned to the first super junction regions and are absentin an edge area surrounding the cell area.
 6. The super junctionsemiconductor device according to claim 1, further comprising: auxiliarystructures formed within a section between the first surface and aburied edge of the super junction structure oriented to the secondsurface, the auxiliary structures provided from a foreign materialdifferent from a first single-crystalline semiconductor material formingthe substrate portion; and a stress relief portion with atoms of asecond semiconductor material replacing atoms of the first semiconductormaterial in a crystal lattice of the single-crystal forming thesemiconductor portion.
 7. The super junction semiconductor deviceaccording to claim 6, wherein the stress relief portion overlapsportions of the first and/or second super junction regions.
 8. The superjunction semiconductor device according to claim 1, further comprising aporous layer between the super junction structure and the doped layer.9. The super junction semiconductor device according to claim 8, whereinthe porous layer is formed directly adjacent to the doped layer.
 10. Thesuper junction semiconductor device according to claim 1, wherein thedoped layer directly adjoins the second surface and is formed by solidphase epitaxy.
 11. The super junction semiconductor device according toclaim 1, further comprising a field stop structure that is of the firstconductivity type, directly adjoins the doped layer and has a meanimpurity concentration that is at most 10% of the maximum impurityconcentration in the doped layer.
 12. The super junction semiconductordevice according to claim 1, wherein the field stop structure includescounter-doped sections in a vertical projection of the first superjunction regions.
 13. The super junction semiconductor device accordingto claim 1, wherein the super junction semiconductor device is aninsulated gate field effect transistor and the doped layer correspondsto a drain layer and directly adjoins the second surface.
 14. A methodof manufacturing a super junction semiconductor device, the methodcomprising: forming columnar first and second super junction regions ofopposite conductivity types in a semiconductor substrate with a processsurface, the first and second super junction regions extending in adirection perpendicular to the process surface and forming a superjunction structure; thinning the semiconductor substrate from theprocess surface to obtain, from the semiconductor substrate, a singlecrystalline semiconductor portion with a first surface and a secondsurface parallel to the first surface such that a distance between thefirst super junction regions having the second conductivity type and thesecond surface does not exceed 30 μm; and introducing, into the secondsurface, impurities of a first conductivity type to form a doped layerbetween the super junction structure and the second surface at least ina cell area.
 15. The method according to claim 14, wherein theintroducing is performed using an implant with an implant doseamorphizing a section of the semiconductor portion directly adjoiningthe second surface; and tempering the amorphized portion at atemperature between 300 and 500 degree Celsius to control a solid phaseepitaxy forming the doped layer.
 16. The method according to claim 14,further comprising annealing the doped layer using a laser fusionprocess.
 17. The method according to claim 14, wherein the thinningincludes a wet etch process that is controlled to stop at a depletionzone boundary of a depletion zone formed by the super junctionstructure.
 18. The method according to claim 17, further comprisingproviding a field stop structure by implanting, from the second surface,impurities of the first conductivity type into a section of the superjunction structure adjoining the doped layer, wherein portions of thefirst super junction regions oriented to the second surface arecounter-doped.
 19. The method according to claim 14, wherein thethinning includes a wet etch process that is controlled to stop at adepletion zone formed by a pn-junction defined by a layer of the firstconductivity type that is formed between the super junction structureand the process surface.
 20. The method according to claim 14, wherein athickness of the substrate portion between the first and second surfacesis at most 100 μm.
 21. The method according to claim 14, furthercomprising forming counter-doped islands of the second conductivitytype, the counter-doped islands directly adjoining the second surfaceand being separated by portions of the doped layer.
 22. The methodaccording to claim 21, wherein the counter-doped islands are formedaligned to the first super junction regions and are not formed in anedge area surrounding the cell area.
 23. The method according to claim21, further comprising: implanting impurities of the first conductivitytype into a process surface of a base substrate having the secondconductivity type; growing by epitaxy an epitaxy layer on the processsurface to form, from the base substrate and the epitaxy layer, thesemiconductor substrate, wherein the counter-doped islands are formed bydiffusion of p-type impurities from the base substrate into the epitaxylayer and the base layer is removed during the thinning of thesemiconductor substrate at least partly.
 24. The method according toclaim 14, further comprising: providing auxiliary structures within asection between the first surface and a buried edge of the superjunction structure oriented to the second surface; and providing, in thesemiconductor portion, a stress relief portion with atoms of a secondsemiconductor material replacing atoms of a first semiconductor materialin a crystal lattice of a single-crystal forming the semiconductorportion.
 25. The method according to claim 24, wherein the stress reliefportion overlaps with portions of the first and/or second super junctionregions.
 26. The method according to claim 14, further comprisingproviding a porous layer between the super junction structure and thedrain layer.
 27. The method according to claim 26, wherein thinning thesemiconductor substrate comprises using a fluid beam to part thesemiconductor substrate along the porous layer.
 28. The method accordingto claim 14, further comprising: forming a field stop structure that isof the first conductivity type, directly adjoins the doped layer and hasa mean impurity concentration that is at most 10% of the maximumimpurity concentration in the doped layer.
 29. The method according toclaim 14, wherein the super junction semiconductor device is aninsulated gate field effect transistor and the doped layer correspondsto a drain layer and directly adjoins the second surface.